To prevent electrical current leaking between adjacent transistors, state-of-the-art microchips feature shallow trench isolation (STI) to isolate transistors from each other. Key steps in the STI ...
Dubbed BiCOM-III, TI's recently announced silicon-germanium (SiGe) complementary bipolar-CMOS manufacturing process integrates both NPN- and PNP-type bi-polar transistors. The result of this ...
Japanese memory chipmaker Renesas Technology Corp. said today it has developed silicon-on-insulator (SOI) CMOS device technology that is both faster and operates at a lower voltage than standard SOI ...
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