AUSTIN, Texas — Researchers at the Digital DNA Laboratory of Motorola's Semiconductor Products Sector claim to have made a key step forward with the finFET dual-gate transistor structure; enabling low ...

The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.

When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior ...