Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

The next frontier in the electronics industry is the FinFET, a new type of multi-gate 3D transistor that offers tremendous power and performance advantages compared to traditional, planar transistors.

How does a nanosheet transistor compare with a FinFET? Issues involved in developing and manufacturing nanosheet transistors. Benefits of adopting nanosheet transistors in chip design. It’s the end of ...