When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior ...

FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

Imec reports improved performance for both Ge-based n-type FinFETs and Ge-based p-type gate-all-around (GAA) devices. For Ge n-type FinFETs, pre-gate stack process optimization dramatically improved ...

FinFET transistors are now in production at the major foundries, having gone from drawing board to products on the shelf in record time. FinFET adoption has been growing steadily because they deliver ...

The next frontier in the electronics industry is the FinFET, a new type of multi-gate 3D transistor that offers tremendous power and performance advantages compared to traditional, planar transistors.

FinFET technology is seen as the answer to fabrication processes below 20 nm. However, FinFET also presents a lot of uncertainty and concern related to defect manifestation, necessary test methods, ...