When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior ...
SANTA CLARA, Calif., April 21, 2022 (GLOBE NEWSWIRE) -- Applied Materials, Inc. today introduced innovations that help customers continue 2D scaling with EUV and detailed the industry’s broadest ...
Starting with its interactive, early detection and elimination of IC’s layout design rule violations program. SAN DIEGO, April 12, 2022 (GLOBE NEWSWIRE) -- GBT Technologies Inc. (OTC PINK: GTCHD) ...
The US government is considering further restrictions on China's access to chip technology required for AI, aiming at new hardware that's hitting the market: GAA (Gate-All-Around) technology and HBM, ...
Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...
While only 12 years old, finFETs are reaching the end of the line. They are being supplanted by gate-all-around (GAA), starting at 3nm [1], which is expected to have a significant impact on how chips ...
From the perspective of foundries, increasing Samsung's yields of GAA (gate-all-around) transistor production would be a lengthy and laborious process that appears to be considerably simpler than ...
Last month, a report surfaced that Samsung plans to rebrand its second-gen 3nm process, confusingly calling it 2nm. While it is unclear why the company would do that, a new report has shed more light ...
A woman walks past the Samsung logo at the company's Seocho building in Seoul on October 25, 2020 - Samsung Electronics chairman Lee Kun-hee, who transformed the South Korean firm into a global tech ...
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