ON Semiconductor is set to launch its new silicon-carbide (SiC)-based hybrid IGBT and related isolated high-current IGBT gate driver at the PCIM Europe 2019 Exhibition and Conference in Nuremberg, ...

Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...

While punch throughs (PTs) are the preferred power device for a growing segment of industrial power conversion applications requiring operation from ac line voltages of 575Vac to 690Vac, historically, ...

PARA LIGHT Electronics Co., Ltd., a global leader in LED design and manufacturing, recently announced the launch of five 650V and 1200V IGBT discrete products aimed at applications such as servo motor ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...