A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...

The MSK3004 is an H-bridge MOSFET power module available in a space efficient isolated ceramic tab power SIP package. This device contains P-channel MOSFETS for the top transistors and N-channel ...

Power management ICs already contain power MOSFETs as integrated elements. This includes switching regulators with integrated FETs, of course, but also includes the driver ICs, which themselves ...

Transistors, which are devices that control or amplify electrical signals and power, are one of the most ubiquitous components of modern electronics. The most widely used transistor is known as the ...

For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

SemiQ has created a line of 1,200V SiC mosfet SOT-227 modules with Rds(on) at 7.4. 15 or 34mΩ. There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, ...

Metal-oxide semiconductor field-effect transistors (MOSFETs) see common use in applications ranging from the very small (like CPU transistors) to very large (power) switching applications. Although ...

In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power ...

Properties of wide-bandgap materials, with a focus on SiC. How a bridgeless totem-pole topology can help cut losses. A breakdown of the half-bridge inverter topology The efficiency of power-conversion ...