A new technical paper titled “Vertical GeSn nanowire MOSFETs for CMOS beyond silicon” was published by researchers at Peter Grünberg Institute 9, JARA, RWTH Aachen University, CEA, LETI, University of ...
Side-wall MoS 2 transistors with an atomically thin channel and a physical gate length of sub-1 nm using the edge of a graphene layer as the gate electrode Find the technical paper link here.
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