Abstract: This letter presents a 300-GHz-band power amplifier (PA) module implementing a PA integrated circuit (IC) fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor ...
Abstract: A high-efficiency continuous Class-F broadband power amplifier (PA) using a pHEMT with a low supply voltage of 3 V is proposed. The proposed PA consists of a harmonic control network, which ...
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