Abstract: In this article, the effect of starting layer on the ferroelectric properties and reliability of HfO2-ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) superlattice (SL) films were systematically ...
Abstract: In this study, an optimized metal-ferroelectric –semiconductor (MFS) stack containing a La-doped HfO2(HLO) ferroelectric (FE) layer and an N-doped TiO2 (NTO) channel is proposed and used to ...
Advances in composite materials are increasingly driven by the need to understand and control their microscopic conduction mechanisms, especially in systems exhibiting complex electronic behaviors.
Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487 372 ...
Department of Chemistry, Faculty of Science and Data Analytics, Institut Teknologi Sepuluh Nopember, Kampus ITS Keputih, Sukolilo, Surabaya 60111, Indonesia ...
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